cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 1/9 MTB11N03BQ8 cystek product specification n-channel logic level enhancement mode power mosfet MTB11N03BQ8 bv dss 30v i d @v gs =10v, t a =25 c 12a r dson (typ)@v gs =10v, i d =12a 8.8m r dson (typ)@v gs =4.5v, i d =12a 12.8m features ? single drive requirement ? low on-resistance ? fast switching characteristic ? repetitive avalanche rated ? pb-free and halogen-free package symbol outline MTB11N03BQ8 sop-8 pin 1 g gate d drain ssource ordering information device package shipping MTB11N03BQ8-0-t3-g sop-8 2500 pcs / tape & reel (pb-free lead plating & halogen-free package) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 2/9 MTB11N03BQ8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol 10s steady state unit drain-source voltage v ds 30 gate-source voltage v gs 25 v continuous drain current @ t a =25 c, v gs =10v *3 12 8.3 continuous drain current @ t a =70 c, v gs =10v *3 i d 7.6 6.6 pulsed drain current i dm 48 *1 avalanche current i as 12 a avalanche energy @ l=1mh, i d =12a, r g =25 e as 72 repetitive avalanche energy @ l=0.05mh e ar 5 *2 mj t a =25 2.5 1.4 total power dissipation *3 t a =70 p d 1.6 0.9 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol typical maximum unit t 10s 35 40 thermal resistance, junction-to-ambient *3 steady state r ja 70 85 thermal resistance, junction-to case steady state r jc 16 25 c/w note : 1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. 3. surface mounted on 1 in2 copper pad of fr-4 board; 125 c/w when mounted on minimum copper pad. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds = v gs , i d =250 a g fs *1 - 19 - s v ds =5v, i d =11a i gss - - 100 na v gs = 25v - - 1 v ds =30v, v gs =0v i dss - - 5 a v ds =24v, v gs =0v, tj=55 c - 8.8 12 m v gs =10v, i d =12a r ds(on) *1 - 12.8 17 m v gs =4.5v, i d =12a dynamic ciss - 751 - coss - 199 - crss - 106 - pf v gs =0v, v ds =10v, f=1mhz
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 3/9 MTB11N03BQ8 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg (v gs =10v) *1, 2 - 15.9 - qg (v gs =5v) *1, 2 - 9.6 - qgs *1, 2 - 2.7 - qgd *1, 2 - 4.7 - nc v ds =24v, v gs =10v, i d =11a t d(on) *1, 2 - 9 - tr *1, 2 - 17.4 - t d(off) *1, 2 - 32.4 - t f *1, 2 - 10 - ns v ds =15v, i d =5.5a, v gs =10v, r gs =4.7 rg - 1.8 - f=1mhz source-drain diode i s *1 - - 12 i sm *3 - - 48 a v sd *1 - 0.84 1.3 v i s =12a, v gs =0v trr - 10.3 - ns qrr - 4.2 - nc i f =11a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 4/9 MTB11N03BQ8 cystek product specification typical characteristics typical output characteristics 0 8 16 24 32 40 48 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v,9v,8v,7v,6v v gs =3.5v v gs =4.5v v gs =4v 5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs = 10 v v gs =3.5v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =12a v gs =4.5v, i d =12a v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =12a
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 5/9 MTB11N03BQ8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss f=1mhz threshold voltage vs junction tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810121416 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =11a v ds =6v v ds =12v v ds =24v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 100ms 1s 10ms 100 s 1ms r ds( on) limit t a =25c, tj=150c v gs =10v,r ja =40c/w single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c,r ja =40c/w,v gs =10v
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 6/9 MTB11N03BQ8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 8 16 24 32 40 48 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =40c/w transient thermal response curves 0.001 0.01 0.1 1 10 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 7/9 MTB11N03BQ8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 8/9 MTB11N03BQ8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : ca00q8 issued date : 2015.05.01 revised date : page no. : 9/9 MTB11N03BQ8 cystek product specification sop-8 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g i part a h j k o m l n right side view part a device name date code
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